Electrical characterization of undoped diamond films for RF MEMS application

Diamond films are considered as superior dielectric in comparison to Si
₃
N
₄
for MEMS applications. The present paper provides a detail characterization study of electrical properties of undoped microcrystalline diamond films involving dc and charge/discharge transient analysis over a wide temperature range. The aim of the study is to provide a better insight on the physical mechanisms responsible for the charge injection and collection processes under different operation conditions applicable to MEMS capacitive switches.