Nonparabolic Multivalley Quantum Correction Model for InGaAs Double-Gate Structures

An extension of the modified local density approximation (MLDA) to account for quantum confinement effects in narrow-band multivalley semiconductors is presented. The original MLDA model is also extended to account for confinement in double-gate and fin-shaped FET devices. The extended model is validated against self-consistent Poisson-Schrödinger results for various double-gate metal-oxide-semiconductor structures with InGaAs as the semiconductor material.