Endurance Improvement Technology With Nitrogen Implanted in the Interface of ${\rm WSiO}_{\bf x}$ Resistance Switching Device

Incorporation of nitrogen as an oxygen-confining layer in the resistance switching reaction region is investigated to improve the reliability of resistance random access memory (RRAM). The switching mechanism can be attributed to the formation and rupture of conduction filaments. A compatible WSiON (around 5 nm) layer is introduced at the interface of tungsten silicon oxide
$({\rm WSiO}_{\rm x})$
and TiN electrode to prevent the randomly diffusing oxygen ions surpassing the storage region of the WSiON layer. The double-layer
${\rm WSiO}_{\rm x}/{\rm WSiON}$
memory structure would enhance the endurance over 100 times so as to better confirm the
${\rm WSiO}_{\rm x}$
RRAM application of nonvolatile memory.