Sol-gel deposition of SnO/sub 2/ on porous silicon layers investigated by RBS method

The pore walls of a columnar type porous silicon (PS) samples of different porosity were coated by SnO/sub 2/ using the sol-gel technique. The as-anodised PS samples were characterized by Scanning Electron Microscopy (SEM) and SnO/sub 2//PS and SnO/sub 2//Si samples were characterized by Rutherford Backscattering Spectrometry (RBS). The Sn signal in RBS spectra revealed that the pores are completely filled with a good depth homogeneity. The influence of PS morphology on the tin oxide sol-gel deposition is discussed.