A new large-signal model for double barrier resonant tunneling diodes for frequency multiplier applications

The paper presents a new double barrier resonant tunneling diode large-signal model, suitable for the design of microwave frequency multiplier circuits. The model is based on the device I-V characteristic and the model parameters can be easily extracted from measured data. The model is used to design a frequency multiplier circuit and to estimate its conversion efficiency. The results are in good agreement with those, obtained using an optimization program based on harmonic balance technique.