High performance 20 /spl Aring/ NO oxynitride for gate dielectric in deep subquarter micron CMOS technology

In this paper we report excellent performance of 20 /spl Aring/, gate oxide annealed in nitric oxide (NO oxynitride) as gate dielectric in sub-quarter micron CMOSFETs. We show that the degradation of current drive and peak transconductance in MOSFETs, previously observed in oxynitrides, can be eliminated by threshold voltage (Vt). Robust reliability characteristics are described for 20 A NO oxynitride.