Numerical Analysis of Si and GaAs Solar Cells Exposed to Space Radiation

In this paper, we present a study about Si and GaAs space solar cells by means of numerical simulations. We have investigated the variations of the short-circuit current, open circuit voltage and maximum power point, before and after the devices were irradiated with 10 MeV protons and fluences between 10
⁹
and 10
¹³
p
⁺
/cm
²
. The simulation results allow to obtain the optimum solar cell with specific requirements for space applications.