Improving Breakdown Voltage of LDMOS Using a Novel Cost Effective Design

A reduced surface field (RESURF) laterally diffused metal oxide semiconductor (LDMOS) device with the concept of charge compensation using p-implant layer (PIL) without additional process step is proposed in standard 0.18-μm technology. By simply using the p-type drift drain (PDD) implantation of p-type LDMOS into n-type LDMOS, breakdown voltage (V
_BD
) is substantially improved. For a thorough study of device phenomena, hydrodynamic transport simulations are first performed to analyze the electric field distributions at high voltage bias in order to explain increases in breakdown voltage and predict its optimal design parameter. Then fabrication of the devices is performed and shows that the breakdown voltages increase significantly. The measurement results show a 12% improvement in V
_BD
and a 5% improvement in figure of merit (FOM). Throughout the fabrication process, the enlarged breakdown voltage obtained by the PIL without additional process and device area show the potential of cost effective. Because such devices have good off-state breakdown voltage and specific on-resistance, they are very competitive with similar technologies and promising system-on-chip (SOC) applications.