2-GHz Si power MOSFET technology

A 2-GHz Si power MOSFET with 50% power-added efficiency and 1.0-W output power at a 3.6-V supply voltage has been developed for use as an RF high-power amplifier in wireless applications. This MOSFET achieves this performance by using a 0.4-/spl mu/m gate power device with an Al-shorted metal-silicide/Si gate structure and a reduced gate finger width pattern.