Ballistic performance limit and gate leakage modeling of Rectangular Gate-all-around InGaAs Nanowire Transistors with ALD Al2O3 as Gate Dielectric

This paper presents the ballisitic current limit and gate leakage due to direct tunneling of a Rectangular Gate-all-around InGaAs Nanowire Transistor and their variation with fin width, oxide thickness and In compostion in InGaAs. Ballistic current is found to be higher (1.5×10
¹¹
Am
⁻²
) for about 20nm fin width, sub-5nm oxide thickness and In-rich InGaAs channel. On the other hand, gate leakage is prominent for sub-4nm oxide thickness, larger fin width and In-rich InGaAs.