Heavy-Ion Induced Anomalous Charge Collection From 4H-SiC Schottky Barrier Diodes

Heavy-ion induced anomalous charge collection was observed in 4H-SiC Schottky Barrier Diodes (SBDs). It is suggested that the range of the incident ions with respect to the thickness of the epi-layer, ion energy, and electric-field intensity of the SBD is the key to understanding this observation and understanding the SEB mechanism.