Gadolinium scandate by high pressure sputtering as a high-k dielectric

We demonstrate the viability of gadolinium scandate (Gd
_2-x
Sc
_x
O
₃
) deposition by high pressure sputtering from targets of its binary compounds (gadolinium and scandium oxides), followed by an anneal in forming gas. Pt/8 nm Gd
_2-x
Sc
_x
O
₃
/n-Si MIS devices were fabricated and characterized. Gadolinium scandate is found to be more stable than ScO
_x
and GdO
_x
in contact with Si. These three dielectrics show a high quality interface, with low leakage currents.