Low-Temperature Quantum Transport Characteristics in Single n-Channel Junctionless Nanowire Transistors

A single n-channel junctionless nanowire transistor is fabricated and characterized for low-temperature quantum transport behavior. Transfer characteristics exhibit current oscillations below flat-band voltage (
V
_FB
) up to temperature 75 K, possibly due to cotunneling through unintentional quantum dots. Furthermore, regular current steps are observed above
V
_FB
, that is, each current plateau corresponds to a fully populated subband. Experimental result of transconductance peaks indicates that the subband energy spacing in the 1-D channel agrees well with theoretical prediction.