Performance Enhancement on p-Channel Charge-Trapping Flash Memory Device With Epitaxial Si/Ge Super-Lattice Channel

Operation characteristics of p-channel TaN/Al
₂
O
₃
/HfO
₂
/HfAlO
₂
/SiO
₂
/Si MAHOS-type nonvolatile memory devices with an epitaxial Si/Ge super-lattice (SL) channel are investigated in this letter, where the SL channel is characterized with good crystal structure and high thermal stability. Remarkable improvement on programming and erasing speeds is observed, as compared to those with SiGe channel. Furthermore, the degradation on reliability properties of retention and endurance is negligible for the device with employing a SL channel.