Effect of Strained $k \cdot p$ Deformation Potentials on Hole Inversion-Layer Mobility

In the literature dedicated to strained p-type metal-oxide-semiconductor field-effect transistor inversion-layer mobility calculation via a
k
·
p
valence-band structure, three key strain-related material parameters, namely, the Bir-Pikus deformation potentials
a
_υ
,
b
, and
d
, were widespread in magnitude. To improve such large discrepancies, in this paper, we conduct sophisticated calculations on 〈110〉/(001) and 〈110〉/(110) hole inversion-layer mobility for gigapascal-level uniaxial stresses along each of three crystallographic directions. The screening effect on surface roughness scattering is taken into account. We find that, to affect the calculated hole mobility enhancement,
a
_υ
is weak,
b
is moderate, and
d
is strong, particularly for the uniaxial compressive stress along the 〈110〉 direction. This provides experimental guidelines for an optimal determination of the primary factor, i.e.,
d
, and the secondary factor, i.e.,
b
, with the commonly used values for
a
_υ
. The result remains valid for varying surface roughness parameters and models and is supported by recent first-principles and tight-binding calculations. Thus, the strained
k
·
p
valence-band structure with the optimized deformation potentials can ensure the accuracy of the calculated transport properties of 2-D hole gas under stress.