300 K operating full-CMOS integrated Single Electron Transistor (SET)-FET circuits

We demonstrate the first Single Electron Transistor (SET) with high-k/metal gate operating at room temperature (at V
D
=0.9 V) cointegrated with fully depleted SOI (FDSOI) MOSFET (with 20 nm gate length) to realize a hybrid SET-FET circuit. Our resulting circuit exhibits typical SET oscillations upto record milliampere range. We also demonstrate a SET-FET based Negative Differential Resistance (NDR) device with 10
⁴
peak-valley-current-ratio and also a literal gate for multivalued logic applications.