Electrical performances of junctionless-FETs at the scaling limit (LCH = 3 nm)

Junctionless-FETs (JL-FET) with extremely short channel length (L
_CH
= 3 nm) were fabricated using anisotropic wet etching of SOI substrate, and superior transfer characteristics are demonstrated. Experimental results and simulation study predict that ultra-low voltage CMOS can be constructed using N- and P-type JL-FETs with single work function metal gate. Furthermore, it is cleared that carrier velocity in the short channel JL-FET is approaching to the injection velocity.