Effect of additives on copper electroplating profile for TSV filling

3D integration with TSVs is emerging as a promising technology for the next generation integrated circuits. TSV filling is a critical process in TSV fabrication and has direct effect on electrical performance of TSVs. In this paper, we mainly focus on effect of additives used in methanesulfonic based solution on copper electroplating filling. Numerical simulation based on an absorption-diffusion model has been carried out with electrochemical data. TSV filling experiment results with different additive concentrations are presented and void-free TSV filling has been achieved.