Broadband near-infrared emission from bismuth doped silicon oxide films prepared by ion-implantation

A series of Bismuth (Bi) doped silicon oxide layers were prepared by ion-implantation. All the samples exhibit strong room temperature near-infrared photoluminescence in the range 1.0μm-1.3μm which we assign to Bi related centres in the oxide matrix, similar to that reported previously for Bi doped oxides fabricated by alternative methods. The activation and sensitization of these luminescent centres was studied as a function of anneal temperature and co-doping with silicon (Si) and aluminium (Al). Comparision with Erbium doped films prepared in a similar way reveals comparable emission intensity from the Bi doped films. The even wider Bi-related luminescence makes this system very promising for use in on-chip, broadband lasers and amplifiers, particularly for use in telecommunications.