Improving Electrical Properties of Bottom-Gate Poly(3-Hexylthiophene) Thin-Film Transistor Using $\hbox{CF}_{4}$ Plasma Treatment

In this letter, the effect of CF
₄
plasma treatment on poly(3-hexylthiophene)-based organic thin-film transistors has been investigated. It was found that CF
₄
plasma treatment on the source/drain electrode can reduce contact resistance and increase mobility. The CF
₄
plasma treatment can increase the mobility from 0.0021 to 0.0102 cm
²
/V·s and decrease the contact resistance by about 70%. Moreover, the CF
₄
plasma treatment is compatible with the bottom-gate bottom-contact structure without degrading the SiO
₂
layer.