High bandwidth 0.18µm CMOS transimpedance amplifier for photoreceiver circuit

This paper presents a transimpedance amplifier for photoreceiver circuit. The proposed structure operates at a data rate of 10 Gb/s at a BER of 10
^-12
and was implemented in a 0.18 μm CMOS process. The structure achieves a wide bandwidth (6.3 GHz). We used NMOS transistors as active resistor to increase bandwidth and to reduce noise level. With a photodiode capacitance of 0.25 pF, the proposed TIA has a gain of 60 dBΩ, a phase margin of 56°, and an input courant noise level of about 23 pA/Hz0.5. It consumes a DC power of 21.2 mW from 1.8 V supply voltage.