RF LDMOS design based on modified CMOS process

Two types of RF LDMOS devices are developed by introducing LDMOS process to standard CMOS fab. The basic device structure is described and the load pull test setup was put up to evaluate the RF performance of both devices. Besides, an impedance transformer was utilized to minimize the mismatch between system and device impedance as well as increase measurement accuracy. The first type is 50V RF LDMOS device which achieves 100W saturated output power for one cell with power density of 1.16 W/mm at 1 GHz. The other one is 28V broadband LDMOS, which achieves a power of 30W with 73% power added efficiency at 1 GHz and 55% power added efficiency at 2 GHz without internal matching network.