Transient RF signals during the switching of MESFET control devices

An analytical model that predicts the intrinsic small-signal switching transients for MESFET control devices is developed. Theoretical results for video-breakthrough and small-signal RF switching waveforms are in excellent agreement with measurements on many devices. Although the intrinsic transients are less than a few nanoseconds in duration, FET material aspects (such as surface states) can induce much longer transients. The 10-90% switching time, which is dominated by intrinsic effects, can be lowered by reducing gate length and gate bias resistance (the latter is more feasible with recently reported diode-gate FFTs).<
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