Miller's approximation in VLSI and power bipolar transistors with reach-through collectors

Using a modified ionization model based on nonlocal impact ionization, Miller's relationship is examined for typical reach-through collector VLSI bipolar transistors with collector epi-thickness between 0.025 and 1 /spl mu/m. The empirical parameter n in Miller's relationship is evaluated under nonlocal impact ionization conditions within the useful range of current gain which corresponds to 0.1>1-1/M>0.005. The validity of Miller's relationship is also examined for power bipolar transistors having reach-through collectors (W/sub epi//spl les/W/sub pt/) using local ionization model and design curves for the empirical parameter n are provided for different collector structures.