Influence of hydrodynamic models on the prediction of submicrometer device characteristics

The influence of different hydrodynamic models on the prediction of submicron device characteristics is studied using the General Hydrodynamic Equation solver. We analyze the simulation results of various structures of Silicon-on-insulator (SOI) Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) and silicon germanium (SiGe) Heterostructure Bipolar Transistors (HBTs). When the size of devices is reduced to the submicron regime, the current drive of a SOI-MOSFET is enhanced mainly by the nonlocal effect. However, the current drive of a HBT is reduced by the dominant thermal back-diffusion effect. The sensitivity of predicted device characteristics on various transport parameters is also discussed.