Measurement of proton radiation damage to Si avalanche photodiodes

The effects of proton radiation damage on EG&G C30902S Si avalanche photodiodes (APD's) were measured. The APD bulk leakage current increased at 0.29 fA/rad, or about 1800 dark photoelectrons per rad(Si) at -10/spl deg/C under 16.2 MeV protons. There was little change in the breakdown voltage with the radiation doses up to 30 krad(Si). The increase in the total dark currents below the breakdown voltage was insignificant until 3 krad(Si).