Evaluation of MESFET nonlinear intermodulation distortion reduction by channel-doping control

This paper is intended to evaluate the linearity that can be provided by general-purpose MESFETs. By a simple physics-based analysis and a practical amplifier design, it will be shown how educated device and bias-point selection can approximate intermodulation distortion (IMD) performance of some normal channel-doping profiles, for which previous theories would not be able to predict good IMD performance, to the one expected from MESFET devices with specially tailored doping profiles.