A GaAs MESFET Schottky diode barrier height reference circuit

A barrier height reference voltage has been implemented with Schottky diodes in GaAs MESFET technology. It achieves less than 100 ppm//spl deg/C drift and can be used to create a reference voltage for source coupled logic, data converters, and as the basis for a variety of biasing circuits. Moderate accuracy is achieved with a circuit topology that reduces the ratio of control amplifier input voltage to reference voltage. The 7/spl times/16 mil/sup 2/ circuit achieves 36 dB of supply rejection, draws 700 /spl mu/A from 5 V, and is implemented in a 20-GHz ion implanted manufacturing process.