High-Quality ICPCVD $\hbox{SiO}_{2}$ for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs

We have developed a high-quality
$\hbox{SiO}_{2}$
deposition process using an inductively coupled plasma chemical vapor deposition system for use as a gate oxide of AlGaN/GaN-on-Si metal–oxide–semiconductor heterostructure field-effect transistor (MOSHFET) for power switching applications. A breakdown field of
$\sim$
12 MV/cm was achieved using the optimized deposition conditions that were successfully applied in fabrication of the normally off AlGaN/GaN-on-Si MOSHFETs. The fabricated device exhibited excellent characteristics: a maximum drain current density of 375 mA/mm, a threshold voltage of 3 V, and a breakdown voltage of 820 V.