Threshold Voltage Control by Substrate Bias in 10-nm-Diameter Tri-Gate Nanowire MOSFET on Ultrathin BOX

We investigated the substrate bias effect in 10-nm-diameter tri-gate nanowire (NW) MOSFETs on ultrathin BOX. By employing a thin BOX of 20 nm and a thin NW body, a large body effect factor was achieved, which is sufficient for wide range
V
_th
control.
I
_on
-
I
_off
adjustment by
V
_sub
of 1 V or -1 V enabled a 13% increase in
I
_on
or a one-order decrease in
I
_off
, respectively. Negative
V
_sub
could enlarge SRAM noise margin. Thus, a tri-gate NW MOSFET on ultrathin BOX is potential advantage for low power operation by adopting dynamic power and performance management.