Transparent Junctionless Thin-Film Transistors With Tunable Operation Mode

Junctionless low-voltage transparent indium-zinc-oxide (IZO) thin-film transistors (TFTs) gated by SiO
₂
-based solid electrolyte films are fabricated on glass substrates by a full room-temperature process. The attractive feature of such TFTs is that the channel and source/drain electrodes are the same ultrathin IZO film without any source/drain electrodes. The operation mode of such devices can be tuned from depletion mode to enhancement mode when the thickness of the IZO film is reduced from 30 to 10 nm. Devices operated in both modes show a small subthreshold swing of <; 120 mV/dec and a large current on/off ratio of >; 10
⁶
.