Record Low-Power Organic RRAM With Sub-20-nA Reset Current

In this letter, organic resistive random access memory (RRAM) devices based on double-layer polychloro-para-xylylene (parylene-C) are fabricated, which show stable bipolar resistive switching behavior, excellent data retention, and high scalability. Moreover, extremely low reset current of sub-20 nA and set current of 0.15 μA are obtained with adequate switching margin for the first time in the field of organic RRAM, almost 10
⁵
times lower than that of the single-layer parylene-C cells, exhibiting great potentials for future low-power applications. Possible mechanism for the ultralow operating current of double-layer device is discussed.