Metal-Gate/High-$\kappa$/Ge nMOS at Small CET With Higher Mobility Than $\hbox{SiO}_{2}/\hbox{Si}$ at Wide Range Carrier Densities

High-performance TaN/TiLaO/La
₂
O
₃
/SiO
₂
/ (111)-Ge nMOSFETs show high mobility of 432 cm
²
/V ·s at 10
¹³
cm
^-2
carrier density (
Ns
), good 1.05 junction ideality factor, and small subthreshold swing of 101 mV/dec, at a small 1.1-nm capacitance-equivalent thickness (CET). This is the first report of higher mobility in the Ge nMOSFET than SiO
₂
/Si universal mobility at wide medium-high
Ns
range and small CET of 1.1 nm, which is attributed to using the (111)-Ge substrate, 30-ns laser annealing, SiO
₂
interfacial layer, and YbGe
x
/n-Ge contact.