Analysis of performances of InSb HEMTs using quantum-corrected Monte Carlo simulation

The strained band structures of InSb are calculated, and then the DC and RF performances of the InSb HEMTs are analyzed by using the quantum-corrected Monte Carlo (MC) simulation. These are also compared with the InAs HEMTs. Although the compressive strain applied to the channel increases the electron effective mass, m*, the InSb HEMTs still show the higher current drivability and the higher f
T
than the InAs HEMTs from the lower V
ds
. However, the severe impact ionization occurs from the lower V
ds
owing to the smaller impact ionization threshold energy, E
th
, although the compressive strain increases it. This restricts the InSb HEMTs within the low V
ds
applications.