Investigation of GaAs based MOVPE-grown AlxGa1−xAsyP1−y strain compensating layers

GaAs-based edge-emitting diode lasers designed for the near-infrared spectral region usually contain waveguide and cladding layers consisting of Al
_x
Ga
_1-x
As. Al
_x
Ga
_1-x
As-on-GaAs is known to be almost perfectly lattice matched. We have grown Al
_x
Ga
_1-x
As
_y
P
_1-y
/Al
_x
Ga
_1-x
As test samples targeting a partial compensation of the room temperature wafer bow by incorporating up to 4% phosphorus in Al
_0.85
GaAs. The proposed strain compensation scheme has been applied in complete laser devices by partially replacing Al
_0.85
Ga
_0.15
As with Al
_0.85
Ga
_0.15
As
_y
P
_1-y
. The results will be discussed.