How to improve the silicon nanocrystal memory cell performances for low power applications

In this paper we propose to optimize the 1T silicon nanocrystal (Si-nc) memory cell in order to reduce the energy consumption for low power applications. Optimized Channel Hot Electron Injection (a 4.5V programming window is reached consuming 1nJ) and Fowler-Nordheim programming are analyzed and compared. The tunnel oxide thickness, Si-ncs area coverage and SiN silicon nanocrystals capping layer are adjusted to optimize the data retention and endurance criteria. We present for the first time the endurance characteristics of a Si-nc cell up to 10
⁶
cycles with a final programming window of 4V.