On-chip self-calibrated process-temperature sensor for TSV 3D integration

In TSV 3D integration, stacking multiple dies would face a severe challenge of the thermal stress and V
_t
scatter. In this paper, a fully on-chip self-calibrated process-temperature (PT) sensor is proposed to monitor the transistor variations (V
_tn
, V
_tp
) and temperature of the intra-die for 3D-ICs. The process information and temperature can be decoupled using the process-sensitive and temperature-dependent ring oscillators. Based on TSMC 65nm CMOS process, this sensor achieves 367.5 pJ per conversion, and the sensitivities of V
_tn
, V
_tp
and the inaccuracy of temperature are merely ±1.6mV, ±0.8mV, and ±1.5
^o
C, respectively.