A Large-Swing 112-Gb/s Selector-Driver Based on a Differential Distributed Amplifier in InP DHBT Technology

We report a 2:1 selector-driver based on a differential distributed amplifier realized in a 0.7-μ m indium phosphide double heterojunction bipolar transistor technology. From transistors reaching
fT
/
f
_max
of 320/380 GHz and a breakdown voltage (BV
_CEO
) of 4.5 V, the selector-driver provides a differential eye amplitude of up to 6.2 and 5.9
VPP
at up to 100 and 112 Gb/s, respectively, for a power consumption of 3.8 W, achieving a record swing-speed product of 620 and 660 VGb/s, respectively.