A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique

This paper reports an InAlAs/InGaAs HEMT distributed baseband amplifier IC using a new loss compensation technique for the drain artificial line. The amplifier has a gain of 16 dB with a DC-to-47-GHz bandwidth. The Gain BandWidth Product (GBWF) is about 300 GHz, which is the highest among all reported single-stage distributed amplifier ICs. It also has a flat gain from DC and operates as a baseband amplifier without any off-chip components.