Fabrication, Novel Morphology, and Field Emission Properties of $\hbox{Ga}_{2}\hbox{O}_{3}/\hbox{In}_{2}\hbox{O}_{3}$ Core-Shell Nanowires

Ga
₂
O
₃
/In
₂
O
₃
core-shell nanowires (NWs) have a structure in which quadrangular In
₂
O
₃
nanoflakes surround Ga
₂
O
₃
NWs. The XRD peak of Ga
₂
O
₃
/In
₂
O
₃
core-shell NWs shifts to a higher angle as Ga
³⁺
impurity, which has a smaller radius than In
³⁺
, is added. Photoluminescence observations reveal that In
₂
O
₃
red emission was shifted to infrared by Ga doping. The low-threshold electric field of Ga
₂
O
₃
/In
₂
O
₃
core-shell NWs is only 1.9 V/μm, which is enhanced by the nanoscale quadrangular flake morphology.