Double-Emitter HCBT Structure—A High-Voltage Bipolar Transistor for BiCMOS Integration

Fabrication of a novel high-voltage double-emitter horizontal current bipolar transistor (HCBT) structure integrated with the standard 0.18-
$\mu\hbox{m}$
CMOS and high-speed HCBT is presented. The device takes advantage of 3-D collector charge sharing to achieve full depletion of the intrinsic collector region and to limit the electric field at the base–collector junction. Transistors with
$BV_{\rm CEO} = \hbox{12.6}\ \hbox{V}$
,
$f_{T} \cdot BV_{\rm CEO} = \hbox{160}\ \hbox{GHz}\cdot \hbox{V}$
, and
$\beta \cdot VA = \hbox{28}\,\hbox{700}\ \hbox{V}$
are demonstrated. The device is fabricated in HCBT BiCMOS process flow without the use of additional lithography masks and represents a zero-cost solution for integration of a high-voltage bipolar device.