Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing

A laser-scribing process without any mask and photolithography is developed for transparent junctionless oxide based in-plane-gate thin-film transistor (TFT) fabrication at room temperature. Such junctionless TFTs feature that the channel and the source/drain electrodes are of the same thin indium-zinc-oxide films. Good electrical performance with an I
_on
/I
_off
ratio of 4 × 10
⁵
, a field-effect mobility of 15 cm
²
/V · s, and a subthreshold swing of 0.12 V/dec is obtained. AND logic is realized with a reliable logic operation in a dual in-plane-gate configuration. The developed laser-scribing technology is highly desirable in terms of the low-cost fabrication process.