Novel gas sensor device based on thin MoO/sub 3/ film and low power-consumption micromachined Si-based structure

We report characterization of thin films of MoO/sub 3/ and preparation of a micromachined Si-based structure. Investigation of the structural features of the films is carried out by means of electron microscopy (SEM and TEM) and X-Ray Diffraction (XRD) techniques. The MoO/sub 3/ layer was also deposited over a micromachined Si-based structure to achieve low power consumption. The sensing layer is capable of detecting NO/sub 2/ up to a few ppm or CO to the level of 1 ppm with short response time.