Transport in amorphous materials with applications to phase-change memories

Trap-limited conduction is here analyzed with special attention to chalcogenide materials used for phase-change memories. After a short review of existing theories, new developments are presented, based on very general microscopic assumptions. Electric field, carrier concentration, and electron temperature variable along the device, as well as diffusion and Poisson self-consistency are considered. The results account for and interpret all main experimental findings in PCM cells.