Effect of Accumulated Charge on the Total Ionizing Dose Response of a NAND Flash Memory

Consecutive write operations performed on a Samsung NAND flash memory are shown to significantly increase the total ionizing dose level at which data corruption occurs. Consequences of multiple consecutive write operations are discussed as well as the mechanisms at work. Elevated temperature exposure and page location within a block of the memory are shown to have significant effects on the amount of data corruption observed. The hardness assurance implications of these effects are discussed.