A Novel Model for Implementation of Gamma Radiation Effects in GaAs HBTs

For predicting the effects of gamma radiation on gallium-arsenide (GaAs) heterojunction bipolar transistors (HBTs), a novel model is presented in this paper, considering the radiation effects. Based on the analysis of radiation-induced degradation in forward base current and cutoff frequency, three semiempirical models to describe the variation of three sensitive model parameters are used for simulating the radiation effects within the framework of a simplified vertical bipolar inter-company model. Its validity was demonstrated by analysis of the experimental results of GaAs HBTs before and after gamma radiation.