A low power 0.3–3.8 GHz low-noise mixer with noise cancellation

This paper shows a low power low-noise mixer in RFCMOS 0.18μm technology that operates between 0.3–3.8GHz. The low power mixer has a Gilbert cell configuration which employs low-noise transconductors designed using the noise-cancelling technique. And the low-noise amplifier designs use the current-reused topology to reduce power consumption and employ a capacitive cross-coupled (CCC) gm-boosting to improve noise performance. This merged front-end achieves 11∼17dB power conversion gain, a flat SSB noise figure of 7.3∼11dB with IF 2MHz over the whole working range. It only consumes 1.69mA current from a 1.8V supply and its active area occupies only 0.04mm
²
.