Influence of sink-source channel's width on Ft and Fmax limit frequencies of AlGaN/GaN HEMT

It is shown that increasing of full width W of the sink-source channel in Al
30
Ga
70
N/GaN HEMT at the expense of the increase of n (a number of sections) results to decreasing of G
max
(F) and H
21
(F). Therefore, amplifying limit frequencies of current F
t
and power F
max
also decrease. F
t
and F
max
decrease at the increasing of n is related with increasing parasitic parameters of Al
30
Ga
70
N/GaN HEMT.