Total-dose and SEU results for the AD8001, a high-performance commercial op-amp fabricated in a dielectrically-isolated, complementary-bipolar process

Radiation test results are presented for the AD8001. This part is a state-of-the-art commercial op-amp fabricated on an advanced dielectrically-isolated process featuring lateral trench isolation and a bonded wafer substrate. Both cobalt-60 and SEU results are discussed. No total-dose failures were seen for exposures of >1Mrad(Si). No single-event induced latchup was observed up to the maximum LET (82.0 Mev-cm/sup 2//mg) used in this study.