Efficient Method for Estimating the Characteristics of Radiation-Induced Current Transients

An efficient method for estimating the characteristics of ion-induced current pulse transients is presented and related to the corresponding mechanisms of single-event charge collection. The method is focused on characterizing the prompt response of a reverse biased p-n junction under relatively low level conditions (LET <; 10 MeV-cm
²
/mg). This method is shown to be accurate when compared to 3D finite element simulations, while reducing solution time such that current pulse calculations can be run in series with both energy deposition and circuit simulations.